Product Description
PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors
PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor
Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor
Description:
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040X.
Application:
• LED driver for LED chain module
• LCD backlighting
• Automotive motor management
• Hook switch for wired telecom
• Switch Mode Power Supply (SMPS)
Features :
• High voltage
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• AEC-Q101 qualified
Name Description Version
PBHV8540X SOT89 plastic surface-mounted package; die pad for good heat transfer; 3 leads
Product Technical Specifications
| Category | Discrete Semiconductor Products |
| | Transistors - Bipolar (BJT) - Single |
| Mfr | |
| Part Status | |
| Transistor Type | |
| Current - Collector (Ic) (Max) | |
| Voltage - Collector Emitter Breakdown (Max) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Power - Max | |
| Frequency - Transition | |
| Operating Temperature | |
| Mounting Type | |
| Package / Case | |
| Supplier Device Package | |
| Base Product Number | PBHV8540 |
| Part number | PBHV8540X,115 |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
Images:
Product Tags:
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PBHV8540X Discrete Semiconductor Devices PBHV8540 Nexperia Bipolar BJT Transistor Images
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